抽象的

Temperature Reliability study on Double Gate Tunnel Field Effect Transistor

N. Guenifi

  

 In the present research work, we report the temperature reliability issues of hetero - structure double gate (het-DG) tunneling field-effect transistor (TFET). Temperature reli­ability is one of the biggest issues of all semiconductor de­vices due to strong dependency of semiconductors with temperature. In the present research work, we have adopt­ed a double gate tunnel FET having two semiconductors Si and GaAs channel materials. In this work, we have compared the temperature effect on hetero-structure (Si/ GaAs) and homostructure (Si) based double (DG) TFET. We have also studied the variation of different device pa­rameters such as gate oxide material and gate work func­tion. The comparison of TFET characteristics and tem­perature sensitivity is done with a high-k and SiO2 as gate dielectric materials. From obtained results, it has been observed that hetero structure double TFET is insensi­tive with temperature variations. This is an indication of excellent future in low power applications with TFETs